Parallel interface EEPROMs with advanced features to ensure high quality and manufacturability of systems. Devices incorporate internal error correction for extended endurance and improved data retention characteristics and also feature an optional software data protection mechanism to guard against inadvertent writes. An extra 64 or 128 bytes of EEPROM memory are also provided in each device for device identification or tracking.

 
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Описание

Battery-Voltage Parallel EEPROM 256K (32K x 8)

Battery-Voltage Parallel EEPROM 64K (8K x 8) with Page Write and Software Data Protection

Paged Parallel EEPROM 1M (128K x 8)

Paged Parallel EEPROM 4M (512K x 8)

Paged Parallel EEPROM 256K (32K x 8)

Parallel EEPROM 64K (8K x 8) with Page Write and Software Data Protection

High-Speed Parallel EEPROM 256K (32K x 8)

High-Speed ParallelEEPROM 64K (8K x 8) with Page Write and Software Data Protection

High Speed Parallel EEPROM 64K (8K x 8) with Page Write and Software Data Protection

Low-Voltage Paged Parallel EEPROM 1M (128K x 8)