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Datasheet

PDF

软件

说明

AT28C040

AT28C040 Complete

(文件大小: 377331, 15 页数, 修订版 F, 更新时间: 02/2009)

4Mb EEPROM with 256-byte Page and Software Data Protection

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High-performance 1-megabit EEPROM offers access times to 200ns with power dissipation of 440mW. It is accessed like static RAM for the read or write cycle without external components. It contains a 256-byte page register to allow writing of up to 256-bytes simultaneously.The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 256 bytes of EEPROM enables device identification or tracking.

关键参数

参数

Operating Voltage (Vcc):

4.5 to 5.5

Density:

4Mb

Organization:

512K x 8

Speed:

200 ns