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AT65609EHV

AT65609EHV Datasheet

(文件大小: 713 KB, 17 页数, 修订版 E, 更新时间: 09/2014)
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Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns over the full military temperature range. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000.

关键参数

参数

Temp. Range (deg C):

-55 to 125

Operating Voltage (Vcc):

4.5 to 5.5