入门指南

为您提供开始评估和使用此产品之前所需了解的全部信息。

相关信息




Datasheet

PDF

软件

说明

AT65609EHW

AT65609EHW Complete

(文件大小: 838 KB, 15 页数, 修订版 D, 更新时间: 11/2013)

PS-AT65609EHW Electrical Characteristics

PS-AT65609EHW Electrical Characteristics Complete

(文件大小: 539541, 30 页数, 修订版 A, 更新时间: 10/2009)
更多文档...

Very low power CMOS static RAM organized as 8192 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns over the full military temperature range. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535.

关键参数

参数

Temp. Range (deg C):

-55 to 125

Operating Voltage (Vcc):

4.5 to 5.5