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Datasheet

PDF

软件

说明

9301/047 (for M65608E)

9301/047 (for M65608E) ESA-ESCC

(文件大小: 321, 26 页数, 更新时间: 02/2004)

5962-89598 (for M65608)

5962-89598 (for M65608) Standard Microcircuit Drawing

(更新时间: 01/1900)

M65608E

M65608E Complete

(文件大小: 879KB, 16 页数, 修订版 P, 更新时间: 11/2012)
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This device is not recommended for new designs.

Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 30ns over the full military temperature range. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000.

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