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Datasheet

PDF

软件

说明

9301/053 (for M65609E) ESCC

9301/053 (for M65609E) ESCC ESA-ESCC

(文件大小: 320, 22 页数, 修订版 A, 更新时间: 10/2007)

5962-02501 (for M65609)

5962-02501 (for M65609) Standard Microcircuit Drawing

(文件大小: 325, 更新时间: 01/1900)

M65609E

M65609E Complete

(文件大小: 838 KB, 15 页数, 修订版 J, 更新时间: 11/2013)
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Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000. It is produced by the same process as the MH1RT sea of gates series.

关键参数

参数

Temp. Range (deg C):

-55 to 125

Operating Voltage (Vcc):

3.0 to 3.6